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MONOLITHIC COMPONENT COMPRISING A GALLIUM

An electronic component comprising: gallium nitride substrate; first and second connection terminals formed on the gallium nitride substrate; a field-effect power transistor formed on the gallium nitride substrate and including a gate, source, and drain; a first Schottky diode formed on the gallium nitride substrate and positioned between the first connection terminal and the gate of the transistor; and a

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Monolithic Component Comprising A Gallium Nitride

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR Abstract. A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

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Method for treating a gallium nitride layer comprising ...

Method for treating a gallium nitride layer comprising dislocations Aug 20, 2014 - STMICROELECTRONICS (TOURS) SAS A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces.

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METHOD FOR TREATING A GALLIUM NITRIDE LAYER

A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.

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Porous N-doped C coated gallium nitride submicron

2021-4-15  Porous architecture of N-doped carbon coated gallium nitride sub-micrometer bricks comprising of nanoscale carbon-coating primary nanoparticles/reduced graphene oxide hybrids (GaN–NC–RGO) are firstly designed as high-performance anode for lithium-ion batteries (LIBs). The GaN–NC–RGO electrode shows excellent electrochemical performance, with the ...

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US3819974A - Gallium nitride metal-semiconductor

A light emitting diode comprising a first layer of gallium nitride, a second, substantially intrinsic layer of magnesium doped gallium nitride forming a junction therewith, a metallic rectifying...

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Gallium Nitride –Based Photodiode: A review -

2021-1-1  The superior properties of Gallium nitride material such high both electron mobility and carrier saturation velocity, similarly high thermal stability and optical absorption coefficient lead to use this material in different fields as civil and military industries to detect missile plumes, flame sensors, engine control, solar UV monitoring, source calibration, UV astronomy, and secure space-to-space

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White Paper - Gallium nitride technology in server and ...

2020-10-5  Figure 4 Server supply comprising a totem pole AC-DC rectifier with two interleaved high frequency bridge legs and an LLC DC-DC converter with center-tapped transformer Typically, state-of-the-art high efficiency power supplies are comprised of a bridgeless or semi- ... Gallium nitride technology in server and telecom applications 10-2018 in.

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Method and system for operating gallium nitride ...

First gallium nitride layer can serve as a drift region and therefore can be a relatively low-doped material. For example, first gallium nitride layer can have an n-conductivity type, with dopant concentrations ranging from 1×10 14 cm −3 to 1×10 18 cm −3. Furthermore, the dopant concentration can be uniform, or can vary, for example, as a function of the thickness of the drift region.

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Two-dimensional gallium nitride Nature Materials

2016-8-29  Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not...

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Monolithic Component Comprising A Gallium Nitride

U.S. patent application number 16/897205 was filed with the patent office on 2020-12-24 for monolithic component comprising a gallium nitride power transistor.The applicant listed for this patent is STMICROELECTRONICS GMBH, STMICROELECTRONICS (TOURS) SAS.

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MONOLITHIC COMPONENT COMPRISING A GALLIUM

Gallium nitride field-effect power transistors are here more particularly considered. It would be desirable to at least partly overcome certain disadvantages of known electronic components integrating gallium nitride field-effect transistors. BRIEF SUMMARY. An embodiment provides a monolithic component comprising a field-effect power transistor ...

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Gallium Nitride –Based Photodiode: A review -

2021-1-1  Gallium Nitride (GaN) is the basic material for nitride class of III-Nitride semiconductor material that has wurtzite structure because of its higher thermodynamic stability as shown in Fig. 1.GaN material characterize with superior properties as wide direct band gab of 3.4 eV, high electron mobility, low sensitivity to ionize radiation outstanding thermal stability, small dielectric constant ...

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Gallium nitride tunneling field-effect transistors ...

2020-9-24  Gallium nitride tunneling field-effect transistors exploiting polarization fields ... III-nitride heterostructures require stronger electric ... completed III-nitride TFET comprising five nanowires can be seen in Fig. 3(a). On the left is the drain contact pad, and on the right is the ...

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White Paper - Gallium nitride technology in server and ...

2020-10-5  Figure 4 Server supply comprising a totem pole AC-DC rectifier with two interleaved high frequency bridge legs and an LLC DC-DC converter with center-tapped transformer Typically, state-of-the-art high efficiency power supplies are comprised of a bridgeless or semi- ... Gallium nitride technology in server and telecom applications 10-2018 in.

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Porous N-doped C coated gallium nitride submicron

Porous architecture of N-doped carbon coated gallium nitride sub-micrometer bricks comprising of nanoscale carbon-coating primary nanoparticles/reduced graphene oxide hybrids (GaN–NC–RGO) are firstly designed as high-performance anode for lithium-ion batteries (LIBs).

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US3819974A - Gallium nitride metal-semiconductor

A light emitting diode comprising a first layer of gallium nitride, a second, substantially intrinsic layer of magnesium doped gallium nitride forming a junction therewith, a metallic rectifying contact to the second layer, an ohmic contact to the first layer, and means for applying a voltage across said contacts and said junctions whereby to bias the device and generate light.

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Infineon Gallium Nitride The Promise of GaN in Light of ...

2019-5-2  Figure 4 Server supply comprising a totem-pole AC/DC rectifi-er with two interleaved high-frequency bridge legs and an LLC DC/DC converter with center-tapped transformer. Typically, state-of-the-art high efficiency power supplies are comprised of a bridgeless PFC stage such as a totem-pole stage and a resonant DC/DC stage such as an LLC

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Two-dimensional gallium nitride Nature Materials

2016-8-29  Two-dimensional gallium nitride. Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the ...

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Patents Assigned to SLT TECHNOLOGIES, INC. - Justia ...

2019-1-11  Abstract: Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) ?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm?3; an impurity concentration of oxygen between ...

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Method for the production of a disc comprising

2011-8-9  The method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide, epitactically depositing a layer of monocrystalline gallium nitride with a thickness of 50 mu m to 2 mm on the layer of monocrystalline 3C-silicon carbide, and removing the substrate from monocrystalline ...

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Gallium nitride tunneling field-effect transistors ...

2020-9-24  Gallium nitride tunneling field-effect transistors exploiting polarization fields ... III-nitride heterostructures require stronger electric ... completed III-nitride TFET comprising five nanowires can be seen in Fig. 3(a). On the left is the drain contact pad, and on the right is the ...

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(PDF) Gallium Nitride (GaN) Nanostructures and Their

2020-7-13  Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review. ... (NRs), comprising of InGaN / GaN. multi-quantum wells,

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An overview of gallium nitride growth chemistry and

2006-1-15  In this paper, gallium nitride (GaN) growth chemistry is characterized by two competing reaction pathways. An overview of GaN gas-phase and surface-phase chemistry is used to generate a comprehensive model for epitaxial GaN growth from the commonly used precursors, trimethylgallium ((CH 3) 3 Ga) and ammonia (NH 3).The role of reactor geometry in controlling the selectivity among

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Porous N-doped C coated gallium nitride submicron

Porous architecture of N-doped carbon coated gallium nitride sub-micrometer bricks comprising of nanoscale carbon-coating primary nanoparticles/reduced graphene oxide hybrids (GaN–NC–RGO) are firstly designed as high-performance anode for lithium-ion batteries (LIBs).

Get Price

Two-dimensional gallium nitride Nature Materials

2016-8-29  Two-dimensional gallium nitride. Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the ...

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Gallium and Gallium Nitride - researchgate.net

A rare, metallic element designated by the symbol, Ga, atomic number 31, and atomic weight 69.72. Explore the latest full-text research PDFs, articles, conference papers, preprints and more on ...

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A gallium nitride single-photon source operating at

Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources. Discover the world's research 20+ million members

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Method of manufacturing a gallium nitride substrate

2019-6-13  Method of manufacturing a gallium nitride substrate Updated Time 12 June 2019 Patent Registration Data. Publication Number. US10094045. Application Number. US15/472467. Application Date. 29 March 2017. Publication Date. 09 October 2018.

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Enlightening Gallium Nitride based UV Photodetectors ...

Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV).

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White Paper - Gallium nitride technology in server and ...

2020-10-5  Figure 4 Server supply comprising a totem pole AC-DC rectifier with two interleaved high frequency bridge legs and an LLC DC-DC converter with center-tapped transformer Typically, state-of-the-art high efficiency power supplies are comprised of a bridgeless or semi- ... Gallium nitride technology in server and telecom applications 10-2018 in.

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Gallium Nitride (Gan) Substrates Market by

2021-3-7  The Gallium Nitride (Gan) Substrates market report covers the key trends overseeing the industry growth across the regional contributors. It provides insights about the restraints as well as opportunities to assist in better decision making and execute further business expansion.

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In situ Surface Passivation of Gallium Nitride for Metal ...

2010-11-9  Abstract: We report the demonstration of novel techniques for surface passivation of gallium nitride (GaN), comprising the steps of in situ vacuum anneal (VA) and silane-ammonia (SiH 4 + NH 3) or silane (SiH 4) treatment for GaN, prior to the formation of high-permittivity gate dielectric in a multichamber metal-organic chemical vapor deposition tool.

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Two-dimensional gallium nitride Nature Materials

2016-8-29  Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not ...

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Infineon Gallium Nitride The Promise of GaN in Light of ...

2019-5-2  Figure 4 Server supply comprising a totem-pole AC/DC rectifi-er with two interleaved high-frequency bridge legs and an LLC DC/DC converter with center-tapped transformer. Typically, state-of-the-art high efficiency power supplies are comprised of a bridgeless PFC stage such as a totem-pole stage and a resonant DC/DC stage such as an LLC

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Gallium Nitride (GaN) - SlideShare

2014-9-17  Gallium Nitride (GaN) This report takes a look into the patenting activity around gallium Nitride uncovering the companies, inventors, and key applications. GaN is a binary III-V direct bandgap semiconductor commonly used in LEDs. Its wide-band

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On-Chip Optical Interconnects Made with Gallium

2019-12-12  In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p–n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components ...

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Method of manufacturing a gallium nitride substrate

2019-6-13  In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by

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On-chip optical interconnects made with gallium

2013-2-13  On-chip optical interconnects made with gallium nitride nanowires. Brubaker MD(1), Blanchard PT, Schlager JB, Sanders AW, Roshko A, Duff SM, Gray JM, Bright VM, Sanford NA, Bertness KA. Author information: (1)Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, USA. [email protected]

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IPBiz: US 3,819,974: Gallium nitride metal

2014-10-18  US 3,819,974: Gallium nitride metal-semiconductor junction light emitting diode. US 3,819,974, with a claim to a light emitting diode comprising gallium nitride and magnesium doped gallium nitride, issued on June 25, 1974. One notes that the "description of preferred embodiment" in US '974 is written in the present tense, not in the past tense.

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